E3S-AD12 Built-in Amplifier Photoelectric Sensor

Appearance: Unshielded, 40 × 40.
Sensing distance: 20 mm.
Output configuration: DC 3-wire, NPN.
Model: Operation mode, NO.
A Wealth of Models for All Types of.
Applications.
Easy installation, high-speed pulse generator, high-speed,
rotation control, and more.
Direct mounted to metal (-N Models) E3S-AD12.
A wealth of models ideal for limit control, counting control,
and other applications (-N Models) E3S-AD12 Appearance: Shielded, M18.
Sensing distance: 5 mm.
Output: NPN.
Model: Operation mode NO.
Aluminum and Iron Both.
Detectable from Long Distances. Detection mode: diffuse reflection type.
Connection mode: lead type (2 m)
Detection range: red light 100mm.
Output mode: NPN output. Appearance: M18 E3S-AD12.
Sensing distance: 10 mm.
Connection method: Pre-wired Models (2 m).
Cable specifications: PVC (oil-resistant).
Operation mode : NC .
Pin arrangement: --.
Applicable connector code: --.
Model: PNP output.
Your Search for Proximity Sensors.
Starts with the World-leading.
Performance and Quality of the E2E.
Standard Sensors for detecting ferrous metals.
Wide array of variations E3S-AD12. Ideal for a variety of applications.
Models with different frequencies are also available to prevent,
mutual interference.
Superior environment resistance with standard cable made of oil,
resistant PVC and sensing surface made of material that resists,
cutting oil.
Useful to help prevent disconnection.
Cable protector provided as a standard feature. Detection mode: diffuse reflection type.
Connection: socket type (M12).
Detection range: red light 300mmm.
Output mode: PNP output. Detection methods: the firing pattern.
Detecction range: 200mm E3S-AD12.
Usage: slender type,
Small thin space probe;
Interference prevention function with close installationE3F3-T31 detection methods: the firing pattern,
Wire lead out type,
Type: Plastic appearance; PNP output,
Threaded cylindrical phhotoelectric sensor, built-in amplifier,
Photoelectric sensor with proximity sensor appearance
High anti interference with optoelectronic -IC technology